FiiO M27

from $2,499.00
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ETA mid Feb

Overview:

  • QCS6490 based on the same architecture as Snapdragon 778G

  • 8GB RAM + 256G storage

  • Dual microSD card slots

  • Dual ES9039SPRO DAC

  • Coaxial and optical outputs

  • 5000mW+5000mW desktop-grade power

  • QCC5181 lossless Bluetooth + XMOS 16-core XU316

  • 31-band PEQ+AUTO

  • Brand-new high-capacity FPGA+RIVER femtosecond crystal oscillators!

  • EQ 9200mAh high-temperature resistant battery

Variant:

ETA mid Feb

Overview:

  • QCS6490 based on the same architecture as Snapdragon 778G

  • 8GB RAM + 256G storage

  • Dual microSD card slots

  • Dual ES9039SPRO DAC

  • Coaxial and optical outputs

  • 5000mW+5000mW desktop-grade power

  • QCC5181 lossless Bluetooth + XMOS 16-core XU316

  • 31-band PEQ+AUTO

  • Brand-new high-capacity FPGA+RIVER femtosecond crystal oscillators!

  • EQ 9200mAh high-temperature resistant battery

specifications

  • Construction material: Aluminum alloy/Titanium alloy

  • Dimensions: About 157.4x85.1x28mm

  • Weight: About 556g (aluminum alloy), About 630g (titanium alloy)

  • RAM: 8GB ROM: 256GB (approximately 241GB usable)

  • Storage expansion: Two microSD card slots, theoretically supporting up to 4TB (2TB per card)

    Hardware configurations

  • Main SoC: Qualcomm

  • Dragonwing QCS6490

  • DAC: ES9039SPRO*2

  • USB: XMOS XU316

  • Bluetooth: QCC5181

  • Display: 5.99-inch (1080x2160) fully laminated

  • Battery capacity: 9200mAh

    Bluetooth specifications

  • Bluetooth reception: Bluetooth 5.4, SBC/AAC/aptX/apt Lossless/apt HD/ aptX Adaptive/LDAC Bluetooth transmission: Bluetooth 5.2, SBC/AAC/aptX/aptX HD/aptX Adaptive/ LDAC/LHDC

    Decoding specifications

  • Local playback: 768kHz/32bit; DSD512 (Native)

  • USB DAC: 768kHz/32bit; DSD512 (Native)

  • USB Audio: 768kHz/32bit; DSD512 (supports DoP/D2P/Native)

  • Coaxial output: 384kHz/24bit; DSD128 (DoP/D2P)

  • Optical output: 192kHz/24bit

  • Coaxial decoding: 192kHz/24bit

    Headphone output

  • Balanced output power 1: L+R≥5000mW+5000mW (325, THD+N< 1%, 12.7Vrms, Ultra high gain mode)

  • Balanced output power 2: L+R≥2250mW+2250mW THD+N< THD+N<1%, 8.5Vrms, Super high gain mode)

  • Balanced output power 3: L+R≥805mW+805mW (300S, THD+N< 1%, 15.5Vrms, Ultra high gain mode)

  • Balanced output power 4: L+R≥320mW+320mW (3002, THD+N< 1%, 9.8Vrms, Super high gain mode)

  • Single-ended output power 1: L+R≥1800mW+1800mW (328, THD+N< 1%, 7.6Vrms, Ultra high gain mode)

  • Single-ended output power 2: L+R≥660mW+660mW (322, THD+N<1%, 4.6Vrms, Super high gain mode) Single-ended output power 3: L+R≥200mW+200mW (300S, THD+N<1%, 7.8Vrms, Ultra high gain mode) Single-ended output power 4: L+R≥80mW+80mW THD+N< THD+N<1%, 4.9Vrms, Super high gain mode

    Balanced LO audio specifications

  • Frequency response: 20Hz~85KHZ: Attenuation < 2.1dB

  • SNR: ≥127dB (A-weighted)

  • Noise floor: <1.9uV (A-weighted)

  • THD+N: 0.0027% (1kHz/-5dB@3252)

  • Crosstalk: ≥107dB

  • Line output level: 4.2Vrms (1kHz@10k2)